PART |
Description |
Maker |
MBM29F200BA12 MBM29F200TA12 |
2M (256K×8/128K×16) Bit Flash Memory(V 电源电压256K×8/128K×16闪速存储器) 200万(256K × 8/128K × 16)位快闪记忆体(V的电源电56K × 8/128K × 16闪速存储器 2M (256K?8/128K?16) Bit Flash Memory(??V ?垫??靛?256K?8/128K?16???瀛???ī
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Fujitsu, Ltd. Fujitsu Limited
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28LV011RPFB-25 28LV011RPFE-25 28LV011RT1FE-25 28LV |
3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)的EEPROM PN Series Box Enclosure; NEMA Type:1, 2, 4, 4X, 12, 13; Enclosure Material:Polycarbonate; External Height:3.54"; External Width:6.3"; External Depth:9.45"; Enclosure Color:Gray 128K X 8 EEPROM 3V, 200 ns, DFP32 3.3V 1 Megabit (128K x 8-Bit) EEPROM 3.3V兆位28K的8位)EEPROM 3.3V 1 Megabit (128K x 8-Bit) EEPROM 128K X 8 EEPROM 3V, 200 ns, DFP32
|
Maxwell Technologies, Inc
|
CAT25C128XA-1.8-GT3 CAT25C128XA-GT3 CAT25C128XA-1. |
128K/256K-Bit SPI Serial CMOS EEPROM 128K/256K-Bit SPI串行EEPROM中的CMOS
|
ON Semiconductor Unisonic Technologies Co., Ltd. TDK, Corp. Atmel, Corp. Advanced Analog Technology, Inc. Silicon Storage Technology, Inc. Air Cost Control
|
MX26C1000APC-90 MX26C1000ATC-10 MX26C1000AMC-10 MX |
1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 100 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 EEPROM 12V, 70 ns, PQCC32 128K X 8 EEPROM 12V, 150 ns, PDSO32 128K X 8 EEPROM 12V, 150 ns, PQCC32
|
Macronix International Co., Ltd. MACRONIX INTERNATIONAL CO LTD
|
MX26C1000BTC-10 MX26C1000BMC-10 MX26C1000BPC-10 MX |
Toggle Switch; Circuitry:DPDT; Switch Operation:On-Off-On; Contact Current Max:12A; Leaded Process Compatible:Yes Toggle Switch; Circuitry:SPDT; Switch Operation:On-On; Contact Current Max:12A; Leaded Process Compatible:Yes 128K X 8 FLASH 12V PROM, 150 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDIP32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PQCC32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 90 ns, PDSO32 1M-BIT [128K x 8] CMOS MULTIPLE-TIME-PROGRAMMABLE-EPROM 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
|
Macronix International Co., Ltd.
|
IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc. IDT[Integrated Device Technology]
|
TC55V4336FF-100 |
128K Word x 32 Bit Synchronous Pipelined Burst Static RAM(128K 瀛?32浣??姝ョ?????查???RAM)
|
Toshiba Corporation
|
MCM63D736 |
128K x 36 Bit Synchronous
Dual I/O, Dual Address SRAM(128K x 36 Bit同步双I/O双地址静态存储器)
|
Motorola, Inc.
|
AL5DS9069V AL5DS9159V AL5DS9199V AL5DS9169V AL5DS9 |
3.3V Synchronous Dual-Port SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit 3.3V的同步双端口SRAM 4K/8K/16K/32K/64K/128K x 8/9/16/18-bit
|
AverLogic Technologies, Inc. AverLogic Technologies, Corp.
|
MCM6226BBXJ17 MCM6226BBXJ17R2 MCM6226BB MCM6226BBE |
128K x 8 Bit Static Random Access Memory 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K x 8 Bit Static Random Access Memory 128K X 8 STANDARD SRAM, 17 ns, PDSO32
|
Motorola Mobility Holdings, Inc. Motorola, Inc. MOTOROLA[Motorola, Inc]
|
MCM63P733A MCM63P733ATQ133 MCM63P733ATQ117 |
128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 32 CACHE SRAM, 4 ns, PQFP100 128K x 32 Bit Pipelined BurstRAM Synchronous Fast Static RAM 128K X 32 CACHE SRAM, 4.2 ns, PQFP100
|
Motorola, Inc. Motorola Mobility Holdings, Inc.
|
CY7C1019CV33 CY7C1019CV33-12VI CY7C1019CV33-15VC C |
128K x 8 Static RAM 128K的8静态RAM JT 26C 26#20 SKT RECP 128K X 8 STANDARD SRAM, 8 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 12 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 15 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 10 ns, PDSO32 128K x 8 Static RAM 128K X 8 STANDARD SRAM, 8 ns, PDSO32 Memory : Async SRAMs
|
Cypress Semiconductor, Corp. Cypress Semiconductor Corp. CYPRESS[Cypress Semiconductor]
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